In general, different types of electrical and electronic components such as transistors, integrated circuits,
microcontrollers, transformers, regulators, motors, interfacing
devices, modules, and basic components are used (as per requirement) to
design different electrical and electronics projects. It is essential to
know about the working of each component before using it practically in
circuit applications. It is very challenging to discuss in detail about
all the important components of electronics
in a single article. Hence, let us discuss in detail about junction
field effect transistor, JFET characteristics, and its working. But,
primarily we must know what are field effect transistors.
Field Effect Transistors
In solid state electronics, a
revolutionary change was done with the invention of the transistor, and
is obtained from the words transfer resistor. From the name itself, we
can understand the way of functioning of transistor i.e., transfer
resistor. The transistors are classified into different types such as a field effect transistor, bipolar junction transistor, and so on.
Field effect transistors (FETs) are
usually termed as unipolar transistors because these FETs operations are
involved with single-carrier type. The field effect transistors are
categorized into different types such as a MOSFET, JFET, DGMOSFET,
FREDFET, HIGFET, QFET, and so on. But, only MOSFETs (Metal Oxide
Semiconductor Field Effect Transistors) and JFETs (Junction Field Effect
Transistors) are typically used in most of the applications. So, before
discussing in detail about junction field effect transistor, primarily
we must know what is JFET.
Junction Field Effect Transistor
As we discussed earlier, junction field
effect transistor is one type of FETs which is used as a switch that can
be controlled electrically. Through the active channel, electric energy
will flow from between the source terminal and drain terminal. If the
gate terminal is supplied with reverse bias voltage, then the flow of
current will be completely switched off and the channel gets strained.
The junction field effect transistor is generally classified into two
types based on their polarities and they are:
- N-Channel junction field effect transistor
- P-Channel junction field effect transistor
N-Channel Junction Field Effect Transistor
The JFET in which electrons are
primarily composed as the charge carrier is termed as N-channel JFET.
Hence, if the transistor is turned on, then we can say that the current
flow is primarily because of the movement of electrons.
P-Channel Junction Field Effect Transistor
The JFET in which holes are primarily
composed as the charge carrier is termed as P-channel JFET. Hence, if
the transistor is turned on, then we can say that the current flow is
primarily because of the holes.
Working of JFET
Operation of JFET can be studied separately for both N-channel and P-channel.
N-Channel Operation of JFET
The working of JFET can be explained by
discussing about how to turn on N-channel JFET and how to turn off
N-channel JFET. For turning ON a N-channel JFET, positive voltage of VDD
has to be applied to the drain terminal of the transistor w.r.t (with
respect to) source terminal such that the drain terminal must be
appropriately more positive than the source terminal. Thus, current flow
is allowed through the drain to source channel. If the voltage at the
gate terminal, VGG is 0V, then there will be maximum current at the
drain terminal and N-channel JFET is said to be in ON condition.
For turning off the N-channel JFET, the positive bias voltage can be
turned off or a negative voltage can be applied to the gate terminal.
Thus, by changing the polarity of the gate voltage the drain current can
be reduced and then N-channel JFET is said to be in OFF condition.P-Channel Operation of JFET
For turning ON P-channel JFET, negative
voltage can be applied across the drain terminal of the transistor w.r.t
source terminal such that the drain terminal must be appropriately more
negative than the source terminal. Thus, the current flow is allowed
through the drain to source channel. If the voltage at the gate terminal, VGG is 0V, then there will be maximum current at the drain terminal and the P-channel JFET is said to be in ON condition.
For turning OFF the P-channel JFET, the negative bias voltage can be
turned off or positive voltage can be applied to the gate terminal. If
the gate terminal is given positive voltage, then the drain currents
starts reducing (until cutoff) and thus the P-channel JFET is said to be
in OFF condition.JFET Characteristics
The JFET characteristics of can be studied for both N-channel and P-channel as discussed below:
N-Channel JFET Characteristics
The N-channel JFET characteristics or
transconductance curve is shown in the figure below which is graphed
between drain current and gate-source voltage. There are multiple
regions in the transconductance curve and they are ohmic, saturation,
cutoff, and breakdown regions.
Ohmic Region
The only region in which transconductance curve shows linear response and drain current is opposed by the JFET transistor resistance is termed as Ohmic region.
Saturation Region
In the saturation region, the N-channel junction field effect transistor is in ON condition and active, as maximum current flows because of the gate-source voltage applied.
Cutoff Region
In this cutoff region, there will be no drain current flowing and thus, the N-channel JFET is in OFF condition.
Breakdown Region
If the VDD voltage applied to the drain terminal exceeds the maximum necessary voltage, then the transistor fails to resist the current and thus, the current flows from drain terminal to source terminal. Hence, the transistor enters into the breakdown region.
The only region in which transconductance curve shows linear response and drain current is opposed by the JFET transistor resistance is termed as Ohmic region.
Saturation Region
In the saturation region, the N-channel junction field effect transistor is in ON condition and active, as maximum current flows because of the gate-source voltage applied.
Cutoff Region
In this cutoff region, there will be no drain current flowing and thus, the N-channel JFET is in OFF condition.
Breakdown Region
If the VDD voltage applied to the drain terminal exceeds the maximum necessary voltage, then the transistor fails to resist the current and thus, the current flows from drain terminal to source terminal. Hence, the transistor enters into the breakdown region.
P-Channel JFET Characteristics
The P-channel JFET characteristics or
transconductance curve is shown in the figure below which is graphed
between drain current and gate-source voltage. There are multiple
regions in the transconductance curve and they are ohmic, saturation,
cutoff, and breakdown regions.
Ohmic Region
The only region in which transconductance curve shows linear response and drain current is opposed by the JFET transistor resistance is termed as Ohmic region.
Saturation Region
In the saturation region, the N-channel junction field effect transistor is in ON condition and active, as maximum current flows because of the gate-source voltage applied.
Cutoff Region
In this cutoff region, there will be no drain current flowing and thus, the N-channel JFET is in OFF condition.
Breakdown Region
If the VDD voltage applied to the drain terminal exceeds the maximum necessary voltage, then the transistor fails to resist the current and thus, the current will flow from drain terminal to source terminal. Hence, the transistor enters into the breakdown region.
The only region in which transconductance curve shows linear response and drain current is opposed by the JFET transistor resistance is termed as Ohmic region.
Saturation Region
In the saturation region, the N-channel junction field effect transistor is in ON condition and active, as maximum current flows because of the gate-source voltage applied.
Cutoff Region
In this cutoff region, there will be no drain current flowing and thus, the N-channel JFET is in OFF condition.
Breakdown Region
If the VDD voltage applied to the drain terminal exceeds the maximum necessary voltage, then the transistor fails to resist the current and thus, the current will flow from drain terminal to source terminal. Hence, the transistor enters into the breakdown region.
Im will try to recreate this types of fet circuits situatuions
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